electron beam accessed memory怎么讀

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electron beam accessed memory英語什么意思：A memory that is written and read by an electron beam. In the writing action the beam either does, or does not, deposit electrons according to a one or zero input. In the reading action the effect of the beam on the charged or uncharged area is detected.; 一種用電子束進(jìn)行讀／寫的存儲器。在寫操作時,根據(jù)輸入是1還是0決定電子束是否沉積電子。在讀操作時,則是檢測電子束在有電荷區(qū)或無電荷區(qū)的效應(yīng)。

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